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| BFQ540 NPN wideband transistor Rev. 04 -- 25 September 2007 Product data sheet IMPORTANT NOTICE Dear customer, As from October 1st, 2006 Philips Semiconductors has a new trade name - NXP Semiconductors, which will be used in future data sheets together with new contact details. In data sheets where the previous Philips references remain, please use the new links as shown below. http://www.philips.semiconductors.com use http://www.nxp.com http://www.semiconductors.philips.com use http://www.nxp.com (Internet) sales.addresses@www.semiconductors.philips.com use salesaddresses@nxp.com (email) The copyright notice at the bottom of each page (or elsewhere in the document, depending on the version) - (c) Koninklijke Philips Electronics N.V. (year). All rights reserved is replaced with: - (c) NXP B.V. (year). All rights reserved. If you have any questions related to the data sheet, please contact our nearest sales office via e-mail or phone (details via salesaddresses@nxp.com). Thank you for your cooperation and understanding, NXP Semiconductors NXP Semiconductors Product specification NPN wideband transistor FEATURES * High gain * High output voltage * Low noise * Gold metallization ensures excellent reliability * Low thermal resistance. APPLICATIONS * VHF, UHF and CATV amplifiers. Marking code: N4. BFQ540 DESCRIPTION NPN wideband transistor in a SOT89 plastic package. PINNING PIN 1 2 3 DESCRIPTION emitter collector base 3 2 1 Fig.1 SOT89. QUICK REFERENCE DATA SYMBOL VCBO VCES VEBO IC Ptot hFE fT s 21 F Note 1. Ts is the temperature at the soldering point of the collector pin. 2 PARAMETER collector-base voltage collector-emitter voltage collector-base voltage collector current (DC) total power dissipation DC current gain transition frequency insertion power gain noise figure RBE = 0 CONDITIONS open emitter open collector Ts 60 C; note 1 IC = 40 mA; VCE = 8 V; Tj = 25 C IC = 40 mA; VCE = 8 V; f = 1 GHz; Tamb = 25 C IC = 40 mA; VCE = 8 V; f = 900 MHz; Tamb = 25 C IC = 40 mA; VCE = 8 V; f = 900 MHz; S = opt MIN. - - - - - 100 - 12 - TYP. - - - - - 120 9 13 1.9 MAX. 20 15 2 120 1.2 250 - - 2.4 UNIT V V V mA W GHz dB dB Rev. 04 - 25 September 2007 2 of 8 NXP Semiconductors Product specification NPN wideband transistor LIMITING VALUES In accordance with the Absolute Maximum Rating System (IEC 60134). SYMBOL VCBO VCES VEBO IC Ptot Tstg Tj PARAMETER collector-base voltage collector-emitter voltage emitter-base voltage collector current (DC) total power dissipation storage temperature operating junction temperature Ts 60 C open emitter RBE = 0 open collector CONDITIONS MIN. - - - - - -65 - BFQ540 MAX. 20 15 2 120 1.2 +150 175 UNIT V V V mA W C C THERMAL CHARACTERISTICS SYMBOL Rth j-s PARAMETER thermal resistance from junction to soldering point CONDITIONS Ts 60 C; Ptot = 1.2 W VALUE 95 UNIT K/W 1.4 Ptot (W) 1.2 1.0 0.8 MBG241 103 handbook, halfpage MBG244 IC (mA) 102 0.6 0.4 0.2 0 0 50 100 150 Tj (oC) 200 10 1 10 VCE (V) 102 VCE 9 V. Fig.2 Power derating curve. Fig.3 SOAR. Rev. 04 - 25 September 2007 3 of 8 NXP Semiconductors Product specification NPN wideband transistor CHARACTERISTICS Tj = 25 C unless otherwise specified. SYMBOL V(BR)CBO V(BR)CES V(BR)EBO ICBO IEBO hFE fT Ce Cre s 21 Vo d2 F Notes 1. dim = -60 dB (DIN45004B); VCE = 8 V; IC = 40 mA; RL = 50 ; Vp = Vo; Vq = Vo -6 dB; Vr = Vo -6 dB; fp = 795.25 MHz; fq = 803.25 MHz; fr = 805.5 MHz; measured at fp + fq - fr = 793.25 MHz. 2. dim = -60 dB (DIN 45004B); IC = 40 mA; VCE = 8 V; RL = 50 ; Vp = Vq = Vo; fp = 806 MHz; fq = 810 MHz; measured at 2fp - fq = 802 MHz. 3. IC = 40 mA; VCE = 8 V; RL = 50 ; Vp = Vq = 225 mV; fp = 250 MHz; fq = 560 MHz; measured at fp + fq = 810 MHz. 2 BFQ540 PARAMETER collector-base breakdown voltage emitter-base breakdown voltage collector-base leakage current emitter-base leakage current DC current gain transition frequency emitter capacitance feedback capacitance insertion power gain output voltage second order intermodulation distortion noise figure CONDITIONS open emitter; IC = 10 A; IE = 0 IE = 100 A; IC = 0 VCB = 8 V; IE = 0 VCB = 1 V; IC = 0 IC = 40 mA; VCE = 8 V IC = 40 mA; VCE = 8 V; fm = 1 GHz IC = 0; VCE = 8 V; f = 1 MHz IC = 40 mA; VCE = 8 V; f = 900 MHz; Tamb = 25 C note 1 note 2 note 3 IC = 40 mA; VCE = 8 V; f = 900 MHz; S = opt MIN. 20 15 2 - - 100 - TYP. - - - - - 120 9 2 0.9 13 500 350 - 1.9 MAX. - - - 50 200 250 - - - - - - -53 2.4 UNIT V V V nA nA GHz pF pF dB mV mV dB dB collector-emitter breakdown voltage RBE = 0; IC = 40 A IC = ie = 0; VEB = 0.5 V; f = 1 MHz - - 12 - - - - Rev. 04 - 25 September 2007 4 of 8 NXP Semiconductors Product specification NPN wideband transistor BFQ540 handbook, halfpage 1.0 MRA688 Cre (pF) handbook, halfpage 12 MRA689 0.8 fT (GHz) 8 VCE = 8V 0.6 VCE = 4V 0.4 4 0.2 0 0 4 8 VCB (V) 12 0 10-1 1 10 IC (mA) 102 IC = 0; f = 1 MHz. f = 1 GHz; Tamb = 25 C. Fig.4 Feedback capacitance as a function of collector-base voltage; typical values. Fig.5 Transition frequency as a function of collector current; typical values. MBG242 MBG243 handbook, halfpage 20 dim (dB) handbook, halfpage 20 d2 (dB) 30 30 40 40 50 50 60 60 70 10 20 30 40 50 60 IC (mA) 70 10 20 30 40 50 60 IC (mA) VCE = 8 V; Vo = 475 mV; RL = 50 . fp + fq - fr = 793.25 MHz; Tamb = 25 C. VCE = 8 V; Vo = 225 mV; RL = 50 ; fp + fq = 810 MHz; Tamb = 25 C. Fig.7 Fig.6 Intermodulation distortion as a function of collector current; typical values. Second order intermodulation distortion as a function of collector current; typical values. Rev. 04 - 25 September 2007 5 of 8 NXP Semiconductors Product specification NPN wideband transistor PACKAGE OUTLINE BFQ540 Plastic surface-mounted package; collector pad for good heat transfer; 3 leads SOT89 D B A bp3 E HE Lp 1 2 bp2 wM B bp1 e1 e 3 c 0 2 scale 4 mm DIMENSIONS (mm are the original dimensions) UNIT mm A 1.6 1.4 bp1 0.48 0.35 bp2 0.53 0.40 bp3 1.8 1.4 c 0.44 0.23 D 4.6 4.4 E 2.6 2.4 e 3.0 e1 1.5 HE 4.25 3.75 Lp 1.2 0.8 w 0.13 OUTLINE VERSION SOT89 REFERENCES IEC JEDEC TO-243 JEITA SC-62 EUROPEAN PROJECTION ISSUE DATE 06-03-16 06-08-29 Rev. 04 - 25 September 2007 6 of 8 NXP Semiconductors BFQ540 NPN wideband transistor Legal information Data sheet status Document status[1][2] Objective [short] data sheet Preliminary [short] data sheet Product [short] data sheet [1] [2] [3] Product status[3] Development Qualification Production Definition This document contains data from the objective specification for product development. This document contains data from the preliminary specification. This document contains the product specification. Please consult the most recently issued document before initiating or completing a design. The term `short data sheet' is explained in section "Definitions". The product status of device(s) described in this document may have changed since this document was published and may differ in case of multiple devices. The latest product status information is available on the Internet at URL http://www.nxp.com. Definitions Draft -- The document is a draft version only. The content is still under internal review and subject to formal approval, which may result in modifications or additions. NXP Semiconductors does not give any representations or warranties as to the accuracy or completeness of information included herein and shall have no liability for the consequences of use of such information. Short data sheet -- A short data sheet is an extract from a full data sheet with the same product type number(s) and title. A short data sheet is intended for quick reference only and should not be relied upon to contain detailed and full information. For detailed and full information see the relevant full data sheet, which is available on request via the local NXP Semiconductors sales office. In case of any inconsistency or conflict with the short data sheet, the full data sheet shall prevail. malfunction of a NXP Semiconductors product can reasonably be expected to result in personal injury, death or severe property or environmental damage. NXP Semiconductors accepts no liability for inclusion and/or use of NXP Semiconductors products in such equipment or applications and therefore such inclusion and/or use is at the customer's own risk. Applications -- Applications that are described herein for any of these products are for illustrative purposes only. NXP Semiconductors makes no representation or warranty that such applications will be suitable for the specified use without further testing or modification. Limiting values -- Stress above one or more limiting values (as defined in the Absolute Maximum Ratings System of IEC 60134) may cause permanent damage to the device. Limiting values are stress ratings only and operation of the device at these or any other conditions above those given in the Characteristics sections of this document is not implied. Exposure to limiting values for extended periods may affect device reliability. Terms and conditions of sale -- NXP Semiconductors products are sold subject to the general terms and conditions of commercial sale, as published at http://www.nxp.com/profile/terms, including those pertaining to warranty, intellectual property rights infringement and limitation of liability, unless explicitly otherwise agreed to in writing by NXP Semiconductors. In case of any inconsistency or conflict between information in this document and such terms and conditions, the latter will prevail. No offer to sell or license -- Nothing in this document may be interpreted or construed as an offer to sell products that is open for acceptance or the grant, conveyance or implication of any license under any copyrights, patents or other industrial or intellectual property rights. Disclaimers General -- Information in this document is believed to be accurate and reliable. However, NXP Semiconductors does not give any representations or warranties, expressed or implied, as to the accuracy or completeness of such information and shall have no liability for the consequences of use of such information. Right to make changes -- NXP Semiconductors reserves the right to make changes to information published in this document, including without limitation specifications and product descriptions, at any time and without notice. This document supersedes and replaces all information supplied prior to the publication hereof. Suitability for use -- NXP Semiconductors products are not designed, authorized or warranted to be suitable for use in medical, military, aircraft, space or life support equipment, nor in applications where failure or Trademarks Notice: All referenced brands, product names, service names and trademarks are the property of their respective owners. Contact information For additional information, please visit: http://www.nxp.com For sales office addresses, send an email to: salesaddresses@nxp.com Rev. 04 - 25 September 2007 7 of 8 NXP Semiconductors BFQ540 NPN wideband transistor Revision history Revision history Document ID BFQ540_N_4 Modifications: BFQ540_3 (9397 750 07064) BFQ540_2 (9397 750 04296) BFQ540_1 Release date 20070925 Data sheet status Product data sheet Product specification Product specification Product specification Change notice Supersedes BFQ540_3 BFQ540_2 BFQ540_1 - * Fig. 1 and package outline updated 20000523 19980827 19950904 Please be aware that important notices concerning this document and the product(s) described herein, have been included in section `Legal information'. (c) NXP B.V. 2007. All rights reserved. For more information, please visit: http://www.nxp.com For sales office addresses, please send an email to: salesaddresses@nxp.com Date of release: 25 September 2007 Document identifier: BFQ540_N_4 |
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